Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin

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Subtotal (1 pack of 2 units)*

R 99,85

(exc. VAT)

R 114,828

(inc. VAT)

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  • 798 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 49.925R 99.85
10 - 48R 48.675R 97.35
50 - 98R 47.215R 94.43
100 - 248R 45.325R 90.65
250 +R 43.51R 87.02

*price indicative

RS stock no.:
273-3032
Mfr. Part No.:
IRFS7734TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

183A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

290W

Typical Gate Charge Qg @ Vgs

270nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, Lead-Free

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

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