Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin TO-263
- RS stock no.:
- 273-3032
- Mfr. Part No.:
- IRFS7734TRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 40,85
(exc. VAT)
R 46,978
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 798 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 20.425 | R 40.85 |
| 10 - 48 | R 19.915 | R 39.83 |
| 50 - 98 | R 19.32 | R 38.64 |
| 100 - 248 | R 18.545 | R 37.09 |
| 250 + | R 17.805 | R 35.61 |
*price indicative
- RS stock no.:
- 273-3032
- Mfr. Part No.:
- IRFS7734TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 183A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Lead-Free | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 183A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Lead-Free | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
Related links
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IRFS7734TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-220
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-220 IRFB7734PBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263