Infineon HEXFET Type N-Channel MOSFET, 55 A, 100 V Enhancement, 3-Pin TO-263 IRL2910STRLPBF
- RS stock no.:
- 830-3290
- Mfr. Part No.:
- IRL2910STRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 313,96
(exc. VAT)
R 361,055
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 415 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 62.792 | R 313.96 |
| 25 - 45 | R 61.222 | R 306.11 |
| 50 - 245 | R 59.386 | R 296.93 |
| 250 - 495 | R 57.01 | R 285.05 |
| 500 + | R 54.73 | R 273.65 |
*price indicative
- RS stock no.:
- 830-3290
- Mfr. Part No.:
- IRL2910STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-470 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-470 | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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