Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF

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Subtotal (1 pack of 10 units)*

R 295,09

(exc. VAT)

R 339,35

(inc. VAT)

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Per Pack*
10 - 10R 29.509R 295.09
20 - 90R 28.771R 287.71
100 - 190R 27.908R 279.08
200 - 490R 26.792R 267.92
500 +R 25.72R 257.20

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Packaging Options:
RS stock no.:
915-5086
Mfr. Part No.:
IRL540NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

74nC

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Width

11.3 mm

Automotive Standard

No

Distrelec Product Id

304-44-471

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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