N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK Infineon IRF540NSTRRPBF

RS stock no.:: 831-2840
Mfr. Part No.:: IRF540NSTRRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK Infineon IRF540NSTRRPBF

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Subtotal (1 pack of 10 units)**

R 248 81

(exc. VAT)

R 286 13

(inc. VAT)

150 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

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Units	Per unit	Per Pack**
10 - 90	R 24,881	R 248,81
100 - 190	R 24,259	R 242,59
200 - 390	R 23,531	R 235,31
400 - 790	R 22,59	R 225,90
800 +	R 21,686	R 216,86

**price indicative

RS stock no.:: 831-2840
Mfr. Part No.:: IRF540NSTRRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF

This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits

• Low RDS(on) minimises power losses during operation
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration

Applications

• Used in power management circuits for automation
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?

Low RDS(on) reduces heat generation and enhances energy efficiency, which is crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?

It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?

It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?

The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

How does the D2PAK package affect its usability?

The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on compact PCBs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	44 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Typical Gate Charge @ Vgs	71 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	9.65mm
Transistor Material	Si
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	4.83mm