Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF

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Subtotal (1 pack of 5 units)*

R 92,97

(exc. VAT)

R 106,915

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 18.594R 92.97
50 - 95R 18.13R 90.65
100 - 395R 17.586R 87.93
400 - 795R 16.882R 84.41
800 +R 16.206R 81.03

*price indicative

Packaging Options:
RS stock no.:
827-4114
Mfr. Part No.:
IRFS4615TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

42mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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