Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252 IRFR4615TRLPBF

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Subtotal (1 pack of 5 units)*

R 110,55

(exc. VAT)

R 127,15

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 22.11R 110.55
50 - 95R 21.558R 107.79
100 - 245R 20.912R 104.56
250 - 995R 20.076R 100.38
1000 +R 19.272R 96.36

*price indicative

Packaging Options:
RS stock no.:
257-5867
Mfr. Part No.:
IRFR4615TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

HEXFET

Mount Type

PCB

Maximum Drain Source Resistance Rds

34mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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