DiodesZetex DMN Type N-Channel MOSFET, 5.3 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H120SFG-13
- RS stock no.:
- 827-0529
- Mfr. Part No.:
- DMN10H120SFG-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 153,44
(exc. VAT)
R 176,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,260 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 7.672 | R 153.44 |
| 100 - 180 | R 7.48 | R 149.60 |
| 200 - 480 | R 7.256 | R 145.12 |
| 500 - 980 | R 6.966 | R 139.32 |
| 1000 + | R 6.687 | R 133.74 |
*price indicative
- RS stock no.:
- 827-0529
- Mfr. Part No.:
- DMN10H120SFG-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 122mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Length | 3.35mm | |
| Width | 3.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 122mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Length 3.35mm | ||
Width 3.35 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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