DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
- RS stock no.:
- 827-0493
- Mfr. Part No.:
- DMN6070SSD-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 90,62
(exc. VAT)
R 104,22
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 60 unit(s) shipping from 05 January 2026
- Plus 7,480 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 4.531 | R 90.62 |
| 100 - 180 | R 4.418 | R 88.36 |
| 200 - 480 | R 4.285 | R 85.70 |
| 500 - 980 | R 4.114 | R 82.28 |
| 1000 + | R 3.949 | R 78.98 |
*price indicative
- RS stock no.:
- 827-0493
- Mfr. Part No.:
- DMN6070SSD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.75V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 4.95mm | |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.75V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 4.95mm | ||
Standards/Approvals J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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