MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 6.6 A, 60 V Enhancement, 8-Pin SOIC DMN6040SSD-13

RS stock no.:: 823-4018
Mfr. Part No.:: DMN6040SSD-13
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 6.6 A, 60 V Enhancement, 8-Pin SOIC DMN6040SSD-13

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 115,72

(exc. VAT)

R 133,08

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

300 unit(s) ready to ship from another location
Plus 86,500 unit(s) shipping from 06 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	R 5.786	R 115.72
100 - 280	R 5.642	R 112.84
300 - 1180	R 5.473	R 109.46
1200 - 2480	R 5.254	R 105.08
2500 +	R 5.044	R 100.88

*price indicative

RS stock no.:: 823-4018
Mfr. Part No.:: DMN6040SSD-13
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	55mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	1.7W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	10.4nC
	Forward Voltage Vf	0.7V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Length	4.95mm
	Standards/Approvals	MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101
	Width	3.95 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 55mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 1.7W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 10.4nC
	Forward Voltage Vf 0.7V
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Length 4.95mm
	Standards/Approvals MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101
	Width 3.95 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 6.6 A, 60 V Enhancement, 8-Pin SOIC DMN6040SSD-13

FREE delivery for orders over R 1,500.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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