DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13
- RS stock no.:
- 751-4109
- Mfr. Part No.:
- DMG4800LSD-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 181,225
(exc. VAT)
R 208,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 20,575 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 7.249 | R 181.23 |
| 125 - 600 | R 7.068 | R 176.70 |
| 625 - 1225 | R 6.856 | R 171.40 |
| 1250 - 2475 | R 6.582 | R 164.55 |
| 2500 + | R 6.318 | R 157.95 |
*price indicative
- RS stock no.:
- 751-4109
- Mfr. Part No.:
- DMG4800LSD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 8.56nC | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.72V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 4.95mm | |
| Standards/Approvals | UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202 | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 8.56nC | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.72V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 4.95mm | ||
Standards/Approvals UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202 | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
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