Infineon SIPMOS Type N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 827-0070
- Distrelec Article No.:
- 304-44-424
- Mfr. Part No.:
- BSS131H6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 250 units)*
R 750,75
(exc. VAT)
R 863,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,250 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 750 | R 3.003 | R 750.75 |
| 1000 - 2750 | R 2.928 | R 732.00 |
| 3000 - 5750 | R 2.84 | R 710.00 |
| 6000 + | R 2.726 | R 681.50 |
*price indicative
- RS stock no.:
- 827-0070
- Distrelec Article No.:
- 304-44-424
- Mfr. Part No.:
- BSS131H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Forward Voltage Vf | 0.81V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Forward Voltage Vf 0.81V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2