Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389TRPBF

RS stock no.:: 826-8908
Mfr. Part No.:: IRF7389TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389TRPBF

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 15,442

(exc. VAT)

R 17,758

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Pack**
20 - 80	R 15,442	R 308,84
100 - 480	R 15,056	R 301,12
500 - 1980	R 14,605	R 292,10
2000 - 3980	R 14,021	R 280,42
4000 +	R 13,46	R 269,20

**price indicative

RS stock no.:: 826-8908
Mfr. Part No.:: IRF7389TRPBF
Manufacturer:: Infineon

IRF7389TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	5.3 A, 7.3 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	46 mΩ, 98 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	22 nC @ 10 V, 23 nC @ 10 V
Length	5mm
Transistor Material	Si
Width	4mm
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389TRPBF

FREE delivery for orders over R 1500

Dual N/P-Channel Power MOSFET, Infineon

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