Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC Infineon IRF9952TRPBF

RS stock no.:: 827-3934
Mfr. Part No.:: IRF9952TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC Infineon IRF9952TRPBF

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 4,255

(exc. VAT)

R 4,893

(inc. VAT)

1340 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 80	R 4,255	R 85,10
100 - 480	R 4,149	R 82,98
500 - 1980	R 4,024	R 80,48
2000 - 3980	R 3,863	R 77,26
4000 +	R 3,709	R 74,18

**price indicative

RS stock no.:: 827-3934
Mfr. Part No.:: IRF9952TRPBF
Manufacturer:: Infineon

IRF9952TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	150 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Typical Gate Charge @ Vgs	6.1 nC @ 10 V, 6.9 nC @ 10 V
Number of Elements per Chip	2
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC Infineon IRF9952TRPBF

Dual N/P-Channel Power MOSFET, Infineon

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