Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

RS stock no.:: 826-8829
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

Image representative of range

Bulk discount available

Price Each (In a Pack of 20)**

R 9,086

(exc. VAT)

R 10,449

(inc. VAT)

7160 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 80	R 9,086	R 181,72
100 - 480	R 8,859	R 177,18
500 - 1980	R 8,593	R 171,86
2000 - 3980	R 8,249	R 164,98
4000 +	R 7,919	R 158,38

**price indicative

RS stock no.:: 826-8829
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

IRF7105TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	25 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	160 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	4mm
Typical Gate Charge @ Vgs	10 nC @ 10 V, 9.4 nC @ 10 V
Transistor Material	Si
Length	5mm
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

FREE delivery for orders over R 1500

Dual N/P-Channel Power MOSFET, Infineon

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