Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

RS stock no.:: 826-8829
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

Image representative of range

7240 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 20)

R 10,864

(exc. VAT)

R 12,494

(inc. VAT)

Units	Per unit	Per Pack*
20 - 80	R 10,864	R 217,28
100 - 480	R 10,593	R 211,86
500 - 1980	R 10,275	R 205,50
2000 - 3980	R 9,864	R 197,28
4000 +	R 9,469	R 189,38

*price indicative

RS stock no.:: 826-8829
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

IRF7105TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	25 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	160 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Typical Gate Charge @ Vgs	10 nC @ 10 V, 9.4 nC @ 10 V
Width	4mm
Transistor Material	Si
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

Dual N/P-Channel Power MOSFET, Infineon