Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC
- RS stock no.:
- 166-1112
- Mfr. Part No.:
- IRF7104PBF
- Manufacturer:
- Infineon
Image representative of range
Subtotal (1 tube of 95 units)*
R 2 220,055
(exc. VAT)
R 2 553,03
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 380 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 95 + | R 23.369 | R 2,220.06 |
*price indicative
- RS stock no.:
- 166-1112
- Mfr. Part No.:
- IRF7104PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC IRF7104TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC IRF7309TRPBF