N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1

RS stock no.:: 825-9146
Mfr. Part No.:: BSC22DN20NS3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 18,142

(exc. VAT)

R 20,863

(inc. VAT)

10000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 480	R 18,142	R 362,84
500 - 980	R 17,688	R 353,76
1000 - 2480	R 17,158	R 343,16
2500 - 4980	R 16,471	R 329,42
5000 +	R 15,812	R 316,24

**price indicative

RS stock no.:: 825-9146
Mfr. Part No.:: BSC22DN20NS3GATMA1
Manufacturer:: Infineon

BSC22DN20NS3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	7 A
Maximum Drain Source Voltage	200 V
Package Type	TDSON
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	225 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	34 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.35mm
Transistor Material	Si
Length	5.35mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	4.2 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.1mm

N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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