Infineon OptiMOS 3 Type N-Channel MOSFET, 7 A, 200 V Enhancement, 8-Pin TDSON BSC22DN20NS3GATMA1
- RS stock no.:
- 825-9146
- Mfr. Part No.:
- BSC22DN20NS3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 220,96
(exc. VAT)
R 254,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 9,980 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 480 | R 11.048 | R 220.96 |
| 500 - 980 | R 10.772 | R 215.44 |
| 1000 - 2480 | R 10.449 | R 208.98 |
| 2500 - 4980 | R 10.031 | R 200.62 |
| 5000 + | R 9.63 | R 192.60 |
*price indicative
- RS stock no.:
- 825-9146
- Mfr. Part No.:
- BSC22DN20NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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