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    N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSC900N20NS3GATMA1

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    Subtotal (1 pack of 10 units)**

    R  239 61

    (exc. VAT)

    R  275 55

    (inc. VAT)

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    70 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Pack**
    10 - 40R 23,961R 239,61
    50 - 240R 23,362R 233,62
    250 - 490R 22,661R 226,61
    500 - 1240R 21,755R 217,55
    1250 +R 20,885R 208,85

    **price indicative

    Packaging Options:
    RS stock no.:
    906-4400
    Mfr. Part No.:
    BSC900N20NS3GATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    15.2 A

    Maximum Drain Source Voltage

    200 V

    Series

    OptiMOS™ 3

    Package Type

    TDSON

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    90 mΩ

    Channel Mode

    Enhancement

    Maximum Power Dissipation

    62.5 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Number of Elements per Chip

    1

    Length

    6.1mm

    Transistor Material

    Si

    Typical Gate Charge @ Vgs

    9 nC @ 10 V

    Maximum Operating Temperature

    +150 °C

    Width

    5.35mm

    Minimum Operating Temperature

    -55 °C

    Height

    1.1mm

    Forward Diode Voltage

    1.2V

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