Infineon OptiMOS 3 N-Channel MOSFET, 15.2 A, 200 V Enhancement, 8-Pin TDSON BSC900N20NS3GATMA1
- RS stock no.:
- 906-4400
- Mfr. Part No.:
- BSC900N20NS3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 262,68
(exc. VAT)
R 302,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 15 September 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 26.268 | R 262.68 |
| 50 - 240 | R 25.611 | R 256.11 |
| 250 - 490 | R 24.843 | R 248.43 |
| 500 - 1240 | R 23.849 | R 238.49 |
| 1250 + | R 22.895 | R 228.95 |
*price indicative
- RS stock no.:
- 906-4400
- Mfr. Part No.:
- BSC900N20NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.35mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Width 5.35mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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