Infineon OptiMOS 3 Type N-Channel MOSFET, 36 A, 200 V Enhancement, 8-Pin TDSON BSC320N20NS3GATMA1

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R 40,29

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R 46,33

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1 - 24R 40.29
25 - 99R 39.28
100 - 499R 38.10
500 - 4999R 36.58
5000 +R 35.12

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Packaging Options:
RS stock no.:
754-5311
Mfr. Part No.:
BSC320N20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

6.1 mm

Length

5.35mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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