Infineon OptiMOS 3 Type N-Channel MOSFET, 15.2 A, 200 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

R 61 060,00

(exc. VAT)

R 70 220,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +R 12.212R 61,060.00

*price indicative

RS stock no.:
178-7500
Mfr. Part No.:
BSC900N20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Width

5.35 mm

Length

6.1mm

Standards/Approvals

No

Height

1.1mm

Automotive Standard

No

Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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