Infineon OptiMOS N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- RS stock no.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 356,14
(exc. VAT)
R 409,56
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 22 September 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 17.807 | R 356.14 |
| 40 - 80 | R 17.362 | R 347.24 |
| 100 - 220 | R 16.841 | R 336.82 |
| 240 - 480 | R 16.168 | R 323.36 |
| 500 + | R 15.521 | R 310.42 |
*price indicative
- RS stock no.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Width | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Width 6.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
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