DiodesZetex ZVN4206A Type N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin TO-92 ZVN4206AV
- RS stock no.:
- 823-1823
- Mfr. Part No.:
- ZVN4206AV
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 115,67
(exc. VAT)
R 133,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 40 unit(s) ready to ship from another location
- Plus 6,170 unit(s) shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.567 | R 115.67 |
| 50 - 390 | R 11.278 | R 112.78 |
| 400 - 1990 | R 10.94 | R 109.40 |
| 2000 - 3990 | R 10.502 | R 105.02 |
| 4000 + | R 10.082 | R 100.82 |
*price indicative
- RS stock no.:
- 823-1823
- Mfr. Part No.:
- ZVN4206AV
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | ZVN4206A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.77mm | |
| Standards/Approvals | No | |
| Width | 2.41 mm | |
| Height | 4.01mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series ZVN4206A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.77mm | ||
Standards/Approvals No | ||
Width 2.41 mm | ||
Height 4.01mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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