DiodesZetex N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin E-Line ZVN4206ASTZ
- RS stock no.:
- 669-7717
- Mfr. Part No.:
- ZVN4206ASTZ
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 165,21
(exc. VAT)
R 189,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,340 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 16.521 | R 165.21 |
| 50 - 190 | R 16.108 | R 161.08 |
| 200 - 490 | R 15.625 | R 156.25 |
| 500 - 990 | R 15.00 | R 150.00 |
| 1000 + | R 14.40 | R 144.00 |
*price indicative
- RS stock no.:
- 669-7717
- Mfr. Part No.:
- ZVN4206ASTZ
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 700mW | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -4V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.41mm | |
| Standards/Approvals | No | |
| Length | 4.77mm | |
| Height | 4.01mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 700mW | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -4V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 2.41mm | ||
Standards/Approvals No | ||
Length 4.77mm | ||
Height 4.01mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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