Microchip VN2106 Type N-Channel Single MOSFETs, 600 mA, 60 V Enhancement, 3-Pin TO-92 VN2106N3-G
- RS stock no.:
- 598-580
- Mfr. Part No.:
- VN2106N3-G
- Manufacturer:
- Microchip
Subtotal (1 bag of 2000 units)*
R 13 830,00
(exc. VAT)
R 15 904,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 February 2026
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Units | Per unit | Per Bag* |
|---|---|---|
| 2000 + | R 6.915 | R 13,830.00 |
*price indicative
- RS stock no.:
- 598-580
- Mfr. Part No.:
- VN2106N3-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | VN2106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.82in | |
| Length | 0.205in | |
| Width | 0.165 in | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series VN2106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.82in | ||
Length 0.205in | ||
Width 0.165 in | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
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