Vishay ThunderFET Type N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- RS stock no.:
- 818-1441
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 20 units)*
R 232,30
(exc. VAT)
R 267,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 11.615 | R 232.30 |
| 300 - 580 | R 11.324 | R 226.48 |
| 600 - 1480 | R 10.985 | R 219.70 |
| 1500 - 2980 | R 10.545 | R 210.90 |
| 3000 + | R 10.123 | R 202.46 |
*price indicative
- RS stock no.:
- 818-1441
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ThunderFET | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 19W | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 2.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ThunderFET | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 19W | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 2.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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