N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS stock no.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 10,191

(exc. VAT)

R 11,72

(inc. VAT)

On back order for despatch 2026/05/19*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 280	R 10,191	R 203,82
300 - 580	R 9,936	R 198,72
600 - 1480	R 9,638	R 192,76
1500 - 2980	R 9,252	R 185,04
3000 +	R 8,882	R 177,64

**price indicative

RS stock no.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

SiA416DJ, N-Channel 100V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Series	ThunderFET
Package Type	PowerPAK SC-70
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Width	2.15mm
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Length	2.15mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	0.75mm

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

FREE delivery for orders over R 1500

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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