Vishay ThunderFET Type N-Channel MOSFET, 11.1 A, 100 V Enhancement, 8-Pin SOIC SI4056DY-T1-GE3
- RS stock no.:
- 787-9137
- Mfr. Part No.:
- SI4056DY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 74,82
(exc. VAT)
R 86,045
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,235 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 14.964 | R 74.82 |
| 50 - 245 | R 14.59 | R 72.95 |
| 250 - 995 | R 14.152 | R 70.76 |
| 1000 - 2495 | R 13.586 | R 67.93 |
| 2500 + | R 13.042 | R 65.21 |
*price indicative
- RS stock no.:
- 787-9137
- Mfr. Part No.:
- SI4056DY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ThunderFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 5.7W | |
| Typical Gate Charge Qg @ Vgs | 19.6nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ThunderFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 5.7W | ||
Typical Gate Charge Qg @ Vgs 19.6nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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