Vishay ThunderFET N-Channel MOSFET, 30 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SIS468DN-T1-GE3
- RS stock no.:
- 787-9383
- Mfr. Part No.:
- SIS468DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
R 129,82
(exc. VAT)
R 149,295
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,920 unit(s) shipping from 15 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 25.964 | R 129.82 |
| 50 - 245 | R 25.314 | R 126.57 |
| 250 - 995 | R 24.554 | R 122.77 |
| 1000 - 2995 | R 23.572 | R 117.86 |
| 3000 + | R 22.63 | R 113.15 |
*price indicative
- RS stock no.:
- 787-9383
- Mfr. Part No.:
- SIS468DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | ThunderFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.1nC | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series ThunderFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.1nC | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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