Vishay Si5418DU N-Channel MOSFET, 11.6 A, 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5418DU-T1-GE3
- RS stock no.:
- 818-1318
- Mfr. Part No.:
- SI5418DU-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 397,02
(exc. VAT)
R 456,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 19.851 | R 397.02 |
| 300 - 580 | R 19.355 | R 387.10 |
| 600 - 1480 | R 18.774 | R 375.48 |
| 1500 - 2980 | R 18.023 | R 360.46 |
| 3000 + | R 17.302 | R 346.04 |
*price indicative
- RS stock no.:
- 818-1318
- Mfr. Part No.:
- SI5418DU-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK ChipFET | |
| Series | Si5418DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.98mm | |
| Height | 0.85mm | |
| Length | 3.08mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK ChipFET | ||
Series Si5418DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.98mm | ||
Height 0.85mm | ||
Length 3.08mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si5418DU Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET
- Vishay Si5419DU Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET
- Vishay Si5419DU Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3