Vishay Si5419DU Type P-Channel MOSFET, 9.9 A, 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- RS stock no.:
- 818-1312
- Mfr. Part No.:
- SI5419DU-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 98,18
(exc. VAT)
R 112,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 240 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 4.909 | R 98.18 |
| 300 - 580 | R 4.786 | R 95.72 |
| 600 - 1480 | R 4.643 | R 92.86 |
| 1500 - 2980 | R 4.457 | R 89.14 |
| 3000 + | R 4.279 | R 85.58 |
*price indicative
- RS stock no.:
- 818-1312
- Mfr. Part No.:
- SI5419DU-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si5419DU | |
| Package Type | PowerPAK ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 31W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | -0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.08mm | |
| Height | 0.85mm | |
| Width | 1.98 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si5419DU | ||
Package Type PowerPAK ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 31W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf -0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.08mm | ||
Height 0.85mm | ||
Width 1.98 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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