Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3
- RS stock no.:
- 256-7365
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 179,30
(exc. VAT)
R 206,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,675 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.172 | R 179.30 |
| 50 - 75 | R 6.993 | R 174.83 |
| 100 - 225 | R 6.784 | R 169.60 |
| 250 - 975 | R 6.512 | R 162.80 |
| 1000 + | R 6.252 | R 156.30 |
*price indicative
- RS stock no.:
- 256-7365
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK ChipFET | |
| Series | SI5442DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Maximum Power Dissipation Pd | 31W | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK ChipFET | ||
Series SI5442DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Maximum Power Dissipation Pd 31W | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.85mm | ||
Automotive Standard No | ||
Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3
This MOSFET is an N-channel switching transistor designed for high-current power-management roles in compact surface-mounted assemblies. It performs as a low-voltage power device suitable for DC-DC converters and synchronous switching topologies, operating across a wide ambient range for demanding thermal environments.
Features and Benefits:
• Very low on-resistance 0.0135Ω enabling reduced conduction losses
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
Applications
• Suitable for synchronous buck converter outputs
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
What thermal range can the device tolerate in deployment?
It is specified to operate from -55°C up to +150°C, accommodating both cold-start and high-temperature operating conditions.
How does the forward voltage affect efficiency in low-voltage systems?
The typical forward voltage of 1.2V across the intrinsic diode reduces dead-time losses and contributes to overall converter efficiency during synchronous operation.
Which package and mounting style are provided for board assembly?
The component is supplied in an 8‑pin PowerPAK ChipFET format intended for surface mounting to enable compact layout and effective thermal pathways.
Is the product compliant with material-restriction directives?
The component meets RoHS requirements, restricting certain hazardous substances in the device composition.
Related links
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET SI5448DU-T1-GE3
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay Si5418DU Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SI7232DN-T1-GE3