Nexperia PMV160UP Type P-Channel MOSFET, 1.2 A, 20 V Enhancement, 3-Pin SOT-23 PMV160UP,215
- RS stock no.:
- 816-6928
- Mfr. Part No.:
- PMV160UP,215
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in packs of 50)*
R 218,30
(exc. VAT)
R 251,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 50 left, ready to ship from another location
- Plus 50 left, shipping from 13 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 4.366 | R 218.30 |
| 100 - 150 | R 4.257 | R 212.85 |
| 200 - 950 | R 4.129 | R 206.45 |
| 1000 - 2950 | R 3.964 | R 198.20 |
| 3000 + | R 3.806 | R 190.30 |
*price indicative
- RS stock no.:
- 816-6928
- Mfr. Part No.:
- PMV160UP,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PMV160UP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.17W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PMV160UP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.17W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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