Nexperia NX2301P Type P-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 NX2301P,215
- RS stock no.:
- 780-5376
- Mfr. Part No.:
- NX2301P,215
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 216,10
(exc. VAT)
R 248,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stocked by manufacturer
- Ready to ship from 19 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 2.161 | R 216.10 |
| 200 - 400 | R 2.107 | R 210.70 |
| 500 - 900 | R 2.044 | R 204.40 |
| 1000 - 2900 | R 1.962 | R 196.20 |
| 3000 + | R 1.883 | R 188.30 |
*price indicative
- RS stock no.:
- 780-5376
- Mfr. Part No.:
- NX2301P,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | NX2301P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series NX2301P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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