Vishay IRF9Z20 Type P-Channel MOSFET, 6.1 A, 50 V Enhancement, 3-Pin TO-220 IRF9Z20PBF
- RS stock no.:
- 815-2682
- Mfr. Part No.:
- IRF9Z20PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 220,62
(exc. VAT)
R 253,71
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 170 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 22.062 | R 220.62 |
| 100 - 240 | R 21.51 | R 215.10 |
| 250 - 490 | R 20.865 | R 208.65 |
| 500 - 990 | R 20.03 | R 200.30 |
| 1000 + | R 19.229 | R 192.29 |
*price indicative
- RS stock no.:
- 815-2682
- Mfr. Part No.:
- IRF9Z20PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-220 | |
| Series | IRF9Z20 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | -6.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.65mm | |
| Length | 10.51mm | |
| Height | 15.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-220 | ||
Series IRF9Z20 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf -6.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.65mm | ||
Length 10.51mm | ||
Height 15.49mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF9Z20 Type P-Channel MOSFET 50 V Enhancement, 3-Pin TO-220 IRF9Z20PBF
- DiodesZetex DMP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMP2037U-7
- DiodesZetex DMP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay IRFR Type P-Channel MOSFET 50 V Enhancement, 3-Pin TO-252 IRFR9020TRPBF
- Vishay Type P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2393DS-T1-GE3
- Vishay IRFI Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFI9610GPBF
- Vishay IRF Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF9610PBF
- Vishay IRFI Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFI9620GPBF