Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 208,63

(exc. VAT)

R 239,92

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 290R 20.863R 208.63
300 - 590R 20.341R 203.41
600 - 1490R 19.731R 197.31
1500 - 2990R 18.942R 189.42
3000 +R 18.184R 181.84

*price indicative

Packaging Options:
RS stock no.:
814-1275
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Series

SiR418DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

0.71V

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links