Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3
- RS stock no.:
- 814-1275
- Mfr. Part No.:
- SIR418DP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 199,86
(exc. VAT)
R 229,84
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 19 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 290 | R 19.986 | R 199.86 |
| 300 - 590 | R 19.486 | R 194.86 |
| 600 - 1490 | R 18.901 | R 189.01 |
| 1500 - 2990 | R 18.145 | R 181.45 |
| 3000 + | R 17.419 | R 174.19 |
*price indicative
- RS stock no.:
- 814-1275
- Mfr. Part No.:
- SIR418DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SiR418DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Forward Voltage Vf | 0.71V | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SiR418DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Forward Voltage Vf 0.71V | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR418DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- Vishay Si2318CDS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1
- Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET 600 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC340N08NS3GATMA1
- Infineon C7 GOLD Type N-Channel MOSFET 650 V Enhancement, 8-Pin HSOF IPT60R150G7XTMA1