Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3

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Subtotal (1 pack of 10 units)*

R 206,54

(exc. VAT)

R 237,52

(inc. VAT)

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  • Shipping from 04 November 2026
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Units
Per unit
Per Pack*
10 - 290R 20.654R 206.54
300 - 590R 20.138R 201.38
600 - 1490R 19.534R 195.34
1500 - 2990R 18.753R 187.53
3000 +R 18.003R 180.03

*price indicative

Packaging Options:
RS stock no.:
814-1275
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SiR418DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.71V

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

50nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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