Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- RS stock no.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 239,30
(exc. VAT)
R 275,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 26 January 2026
- Plus 3,050 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 250 | R 4.786 | R 239.30 |
| 300 - 550 | R 4.667 | R 233.35 |
| 600 - 1450 | R 4.527 | R 226.35 |
| 1500 - 2950 | R 4.346 | R 217.30 |
| 3000 + | R 4.172 | R 208.60 |
*price indicative
- RS stock no.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2304DDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2304DDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23