N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3

RS stock no.:: 802-4451
Mfr. Part No.:: IXFQ28N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 2)

R 127,61

(exc. VAT)

R 146,75

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available

Units	Per unit	Per Pack*
2 - 8	R 127,61	R 255,22
10 - 28	R 124,42	R 248,84
30 - 58	R 120,685	R 241,37
60 - 118	R 115,86	R 231,72
120 +	R 111,225	R 222,45
*price indicative

RS stock no.:: 802-4451
Mfr. Part No.:: IXFQ28N60P3
Manufacturer:: IXYS

IXFQ28N60P3, IXFH28N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	260 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	695 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.9mm
Length	15.8mm
Typical Gate Charge @ Vgs	50 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	20.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series