Name: IXYS HiperFET, Polar3 N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXFQ34N50P3
Brand: IXYS
SKU: 802-4455
Price: 181.30 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	IXYS
	Channel Type	N
	Maximum Continuous Drain Current	34 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-3PN
	Series	HiperFET, Polar3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	175 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Maximum Power Dissipation	695 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Transistor Material	Si
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Length	15.8mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	4.9mm
	Minimum Operating Temperature	-55 °C
	Height	20.3mm

	Select all
	Brand IXYS
	Channel Type N
	Maximum Continuous Drain Current 34 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-3PN
	Series HiperFET, Polar3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 175 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Maximum Power Dissipation 695 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Transistor Material Si
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Length 15.8mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 4.9mm
	Minimum Operating Temperature -55 °C
	Height 20.3mm

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

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A wide range of advanced discrete Power MOSFET devices from IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXFQ34N50P3

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