N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

RS stock no.:: 802-4492
Mfr. Part No.:: IXFX120N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

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Price (Excl VAT) Each

R 336,41

(exc. VAT)

R 386,87

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available

Units	Per unit
1 +	R 336,41

RS stock no.:: 802-4492
Mfr. Part No.:: IXFX120N30P3
Manufacturer:: IXYS

IXFK150N30P3, IXFX150N30P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS247
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.21mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	16.13mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	21.34mm

N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series