N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

RS stock no.:: 802-4394
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

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Price (Excl VAT) Each

R 352,49

(exc. VAT)

R 405,36

(inc. VAT)

24 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Units	Per unit
1 +	R 352,49

RS stock no.:: 802-4394
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.13mm
Length	19.96mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	150 nC @ 10 V
Transistor Material	Si
Height	26.16mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series