N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS stock no.:: 920-0987
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

Bulk discount available

Price (Excl VAT) Each (In a Tube of 25)

R 562,679

(exc. VAT)

R 647,081

(inc. VAT)

71 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

	Units	Per unit	Per Tube*
	25 - 25	R 562,679	R 14 066,975
	50 - 75	R 548,612	R 13 715,30
	100 - 225	R 532,154	R 13 303,85
	250 - 475	R 510,868	R 12 771,70
	500 +	R 490,433	R 12 260,825
*price indicative

RS stock no.:: 920-0987
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	20.29mm
Transistor Material	Si
Typical Gate Charge @ Vgs	268 nC @ 10 V
Width	5.31mm
Number of Elements per Chip	1
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series