IXYS HiperFET, Polar3 N-Channel MOSFET, 210 A, 300 V Enhancement, 3-Pin PLUS264
- RS stock no.:
- 920-0987
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
R 11 427,10
(exc. VAT)
R 13 141,175
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | R 457.084 | R 11,427.10 |
| 50 - 75 | R 445.656 | R 11,141.40 |
| 100 - 225 | R 432.287 | R 10,807.18 |
| 250 - 475 | R 414.995 | R 10,374.88 |
| 500 + | R 398.395 | R 9,959.88 |
*price indicative
- RS stock no.:
- 920-0987
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | PLUS264 | |
| Series | HiperFET, Polar3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Typical Gate Charge Qg @ Vgs | 268nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.29mm | |
| Standards/Approvals | No | |
| Height | 26.59mm | |
| Width | 5.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type PLUS264 | ||
Series HiperFET, Polar3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.89kW | ||
Typical Gate Charge Qg @ Vgs 268nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 20.29mm | ||
Standards/Approvals No | ||
Height 26.59mm | ||
Width 5.31mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS