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    N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

    Bulk discount available

    Subtotal (1 tube of 25 units)**

    R  11 436 35

    (exc. VAT)

    R  13 151 80

    (inc. VAT)

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    75 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Tube**
    25 - 25R 457,454R 11 436,35
    50 - 75R 446,018R 11 150,45
    100 - 225R 432,638R 10 815,95
    250 - 475R 415,332R 10 383,30
    500 +R 398,719R 9 967,975

    **price indicative

    RS stock no.:
    920-0987
    Mfr. Part No.:
    IXFB210N30P3
    Manufacturer:
    IXYS
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    Manufacturer

    IXYS

    Channel Type

    N

    Maximum Continuous Drain Current

    210 A

    Maximum Drain Source Voltage

    300 V

    Package Type

    PLUS264

    Series

    HiperFET, Polar3

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    14.5 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    5V

    Maximum Power Dissipation

    1.89 kW

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    20.29mm

    Transistor Material

    Si

    Typical Gate Charge @ Vgs

    268 nC @ 10 V

    Width

    5.31mm

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Height

    26.59mm

    Minimum Operating Temperature

    -55 °C

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