N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
- RS stock no.:
- 920-0987
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 tube of 25 units)**
R 11 436 35
(exc. VAT)
R 13 151 80
(inc. VAT)
75 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Tube** |
---|---|---|
25 - 25 | R 457,454 | R 11 436,35 |
50 - 75 | R 446,018 | R 11 150,45 |
100 - 225 | R 432,638 | R 10 815,95 |
250 - 475 | R 415,332 | R 10 383,30 |
500 + | R 398,719 | R 9 967,975 |
**price indicative
- RS stock no.:
- 920-0987
- Mfr. Part No.:
- IXFB210N30P3
- Manufacturer:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | IXYS | |
Channel Type | N | |
Maximum Continuous Drain Current | 210 A | |
Maximum Drain Source Voltage | 300 V | |
Package Type | PLUS264 | |
Series | HiperFET, Polar3 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 14.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Maximum Power Dissipation | 1.89 kW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 20.29mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 268 nC @ 10 V | |
Width | 5.31mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Height | 26.59mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type PLUS264 | ||
Series HiperFET, Polar3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 1.89 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 20.29mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 268 nC @ 10 V | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 26.59mm | ||
Minimum Operating Temperature -55 °C | ||
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