IXYS Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3

Image representative of range

View all MOSFETs

Subtotal (1 unit)*

R 382,68

(exc. VAT)

R 440,08

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 23 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +R 382.68

*price indicative

Packaging Options:
RS stock no.:
802-4344
Distrelec Article No.:
302-53-299
Mfr. Part No.:
IXFB110N60P3
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

600V

Package Type

PLUS264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

245nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.89kW

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

20.29mm

Height

26.59mm

Width

5.31 mm

Distrelec Product Id

30253299

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links