IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 5 462,91
(exc. VAT)
R 6 282,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 240 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 182.097 | R 5,462.91 |
| 60 - 90 | R 177.544 | R 5,326.32 |
| 120 - 270 | R 172.218 | R 5,166.54 |
| 300 - 570 | R 165.329 | R 4,959.87 |
| 600 + | R 158.716 | R 4,761.48 |
*price indicative
- RS stock no.:
- 920-0965
- Mfr. Part No.:
- IXFH30N50Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 690W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Height | 16.26mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 690W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Height 16.26mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 48 A 3-Pin TO-264 IXFK48N60Q3
- IXYS HiperFET 64 A 3-Pin TO-264 IXFK64N50Q3
- IXYS HiperFET 64 A 3-Pin PLUS247 IXFX64N50Q3
- IXYS HiperFET 45 A 3-Pin ISOPLUS247 IXFR64N50Q3