onsemi MGSF1 Type N-Channel MOSFET, 750 mA, 20 V Enhancement, 3-Pin SOT-23 MGSF1N02LT1G
- RS stock no.:
- 792-5666
- Mfr. Part No.:
- MGSF1N02LT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 116,04
(exc. VAT)
R 133,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,240 unit(s) shipping from 03 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 5.802 | R 116.04 |
| 100 - 180 | R 5.657 | R 113.14 |
| 200 - 980 | R 5.488 | R 109.76 |
| 1000 - 1980 | R 5.268 | R 105.36 |
| 2000 + | R 5.058 | R 101.16 |
*price indicative
- RS stock no.:
- 792-5666
- Mfr. Part No.:
- MGSF1N02LT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 750mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | MGSF1 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 203nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 750mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series MGSF1 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 203nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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