onsemi MGSF1 N-Channel MOSFET, 2.1 A, 30 V Enhancement, 3-Pin SOT-23 MGSF1N03LT1G
- RS stock no.:
- 808-0130
- Mfr. Part No.:
- MGSF1N03LT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (100 units, in packs of 100)*
R 486,60
(exc. VAT)
R 559,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 unit(s) shipping from 13 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 4.866 | R 486.60 |
| 200 - 300 | R 4.745 | R 474.50 |
| 400 - 700 | R 4.602 | R 460.20 |
| 800 - 900 | R 4.418 | R 441.80 |
| 1000 + | R 4.242 | R 424.20 |
*price indicative
- RS stock no.:
- 808-0130
- Mfr. Part No.:
- MGSF1N03LT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | MGSF1 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 690mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series MGSF1 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 690mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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