N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

RS stock no.:: 787-9373
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

Image representative of range

Bulk discount available

Price (Excl VAT) Each (On a Tape of 5)

R 5,838

(exc. VAT)

R 6,714

(inc. VAT)

On back order for despatch 2025/02/27*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Tape**
5 - 45	R 5,838	R 29,19
50 - 245	R 5,692	R 28,46
250 - 995	R 5,522	R 27,61
1000 - 2995	R 5,302	R 26,51
3000 +	R 5,09	R 25,45

**price indicative

RS stock no.:: 787-9373
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

SiRA06DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Maximum Operating Temperature	+150 °C
Width	5.26mm
Typical Gate Charge @ Vgs	51 nC @ 10 V
Number of Elements per Chip	1
Length	6.25mm
Transistor Material	Si
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

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