Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

Bulk discount available

Subtotal (1 tape of 5 units)*

R 90,76

(exc. VAT)

R 104,375

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
5 - 45R 18.152R 90.76
50 - 245R 17.698R 88.49
250 - 995R 17.168R 85.84
1000 - 2995R 16.482R 82.41
3000 +R 15.822R 79.11

*price indicative

Packaging Options:
RS stock no.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links