Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

R 159,68

(exc. VAT)

R 183,63

(inc. VAT)

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Temporarily out of stock
  • Shipping from 29 June 2027
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Units
Per unit
Per Tape*
5 - 45R 31.936R 159.68
50 - 245R 31.138R 155.69
250 - 995R 30.204R 151.02
1000 - 2995R 28.996R 144.98
3000 +R 27.836R 139.18

*price indicative

Packaging Options:
RS stock no.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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