Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

R 94,72

(exc. VAT)

R 108,93

(inc. VAT)

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Units
Per unit
Per Tape*
5 - 45R 18.944R 94.72
50 - 245R 18.47R 92.35
250 - 995R 17.916R 89.58
1000 - 2995R 17.20R 86.00
3000 +R 16.512R 82.56

*price indicative

Packaging Options:
RS stock no.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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