Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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Subtotal (1 bag of 2 units)*

R 60,46

(exc. VAT)

R 69,52

(inc. VAT)

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Units
Per unit
Per Bag*
2 - 48R 30.23R 60.46
50 - 498R 29.475R 58.95
500 - 998R 28.59R 57.18
1000 - 1998R 27.445R 54.89
2000 +R 26.345R 52.69

*price indicative

Packaging Options:
RS stock no.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Width

3.15 mm

Standards/Approvals

No

Height

1.12mm

Length

3.15mm

Automotive Standard

No

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