Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3
- RS stock no.:
- 768-9307
- Mfr. Part No.:
- SISA04DN-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 bag of 2 units)*
R 64,59
(exc. VAT)
R 74,278
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 2 - 48 | R 32.295 | R 64.59 |
| 50 - 498 | R 31.49 | R 62.98 |
| 500 - 998 | R 30.545 | R 61.09 |
| 1000 - 1998 | R 29.325 | R 58.65 |
| 2000 + | R 28.15 | R 56.30 |
*price indicative
- RS stock no.:
- 768-9307
- Mfr. Part No.:
- SISA04DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 0.73V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 0.73V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3