Vishay Si1308EDL Type N-Channel Power MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-323 Si1308EDL-T1-GE3
- RS stock no.:
- 787-9121
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 149,675
(exc. VAT)
R 172,125
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Plus 400 unit(s) shipping from 29 December 2025
- Final 12,125 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 5.987 | R 149.68 |
| 100 - 225 | R 5.838 | R 145.95 |
| 250 - 975 | R 5.662 | R 141.55 |
| 1000 - 2975 | R 5.436 | R 135.90 |
| 3000 + | R 5.218 | R 130.45 |
*price indicative
- RS stock no.:
- 787-9121
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-323 | |
| Series | Si1308EDL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.185Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-323 | ||
Series Si1308EDL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.185Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 0.5W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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