Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- RS stock no.:
- 152-6358
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 150,20
(exc. VAT)
R 172,725
(inc. VAT)
Add 275 units to get free delivery
Last RS stock
- 25 left, ready to ship from another location
- Final 75 unit(s) shipping from 25 February 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 6.008 | R 150.20 |
| 125 - 225 | R 5.858 | R 146.45 |
| 250 - 600 | R 5.682 | R 142.05 |
| 625 - 1225 | R 5.455 | R 136.38 |
| 1250 + | R 5.237 | R 130.93 |
*price indicative
- RS stock no.:
- 152-6358
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 0.86W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 0.86W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
Load Switching for Portable Devices
DC/DC Converter
Related links
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3