Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- RS stock no.:
- 152-6358
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 147,95
(exc. VAT)
R 170,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 75 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 5.918 | R 147.95 |
| 125 - 225 | R 5.77 | R 144.25 |
| 250 - 600 | R 5.596 | R 139.90 |
| 625 - 1225 | R 5.372 | R 134.30 |
| 1250 + | R 5.158 | R 128.95 |
*price indicative
- RS stock no.:
- 152-6358
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.86W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.86W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
Load Switching for Portable Devices
DC/DC Converter
Related links
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