N-Channel MOSFET, 8 A, 850 V, 3-Pin DPAK Vishay SIHD11N80AE-T1-GE3
- RS stock no.:
- 228-2848
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 2000 units)**
R 54 858 00
(exc. VAT)
R 63 086 00
(inc. VAT)
Usually in stock
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 2000 + | R 27,429 | R 54 858,00 |
**price indicative
- RS stock no.:
- 228-2848
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 850 V | |
| Package Type | DPAK (TO-252) | |
| Series | E Series | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.45 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 850 V | ||
Package Type DPAK (TO-252) | ||
Series E Series | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.45 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
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