Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

R 26 800,00

(exc. VAT)

R 30 820,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +R 13.40R 26,800.00

*price indicative

RS stock no.:
228-2848
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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