onsemi 2N7002KW Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002KW
- RS stock no.:
- 805-1135
- Mfr. Part No.:
- 2N7002KW
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 100 units)*
R 206,70
(exc. VAT)
R 237,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 300 unit(s) shipping from 05 January 2026
- Plus 2,300 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 100 - 400 | R 2.067 | R 206.70 |
| 500 - 900 | R 2.015 | R 201.50 |
| 1000 - 4900 | R 1.955 | R 195.50 |
| 5000 - 9900 | R 1.876 | R 187.60 |
| 10000 + | R 1.801 | R 180.10 |
*price indicative
- RS stock no.:
- 805-1135
- Mfr. Part No.:
- 2N7002KW
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002KW | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Height | 1.2mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002KW | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Height 1.2mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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