Vishay TP0610K Type P-Channel MOSFET, 185 mA, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- RS stock no.:
- 787-9018
- Mfr. Part No.:
- TP0610K-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 42,08
(exc. VAT)
R 48,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 240 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 2.104 | R 42.08 |
| 100 - 240 | R 2.052 | R 41.04 |
| 260 - 980 | R 1.99 | R 39.80 |
| 1000 - 2980 | R 1.911 | R 38.22 |
| 3000 + | R 1.834 | R 36.68 |
*price indicative
- RS stock no.:
- 787-9018
- Mfr. Part No.:
- TP0610K-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 185mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.4V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 185mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.4V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- DiodesZetex Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi NDS0605 Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 NDS0610
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Nexperia BSH201 Type P-Channel MOSFET 60 V Enhancement215